FDS6670 FDS6670A -- Single N-Channel, Logic Level, PowerTrench MOSFET
Features
· 13 A, 30 V. RDS(ON) = 8 mW @ VGS = 10 V
RDS(ON) = 10 mW @ VGS = 4.5 V
· Fast switching speed
· Low gate charge
· High performance trench technology for extremely low RDS(ON)
· High power and current handling capability
| FET 类型 |
MOSFET N 通道，金属氧化物 |
| FET 功能 |
逻辑电平门 |
| 漏源极电压 (Vdss) |
30V |
| 电流 - 连续漏极 (Id)（25°C 时） |
13A （Ta） |
| 不同 Id、Vgs 时的 Rds On（最大值） |
8 毫欧 @ 13A，10V |
| 不同 Id 时的 Vgs(th)（最大值） |
3V @ 250µA |
| 不同 Vgs 时的栅极电荷 (Qg) |
30nC @ 5V |
| 不同 Vds 时的输入电容 (Ciss) |
2220pF @ 15V |
| 功率 - 最大值 |
1W |
| 安装类型 |
表面贴装 |
| 封装/外壳 |
8-SOIC（0.154"，3.90mm 宽） |
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