RA08N1317M-101

型号：RA08N1317M-101
品牌：MIT

批号：13+
封装：RF Power Transistor
原价：130
数量：23658
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备注：Origina in stock 原装现货

详细描述

RA08N1317M-101

135-175MHz 8W 9.6V PORTABLE RADIO

DESCRIPTION

The RA08N1317M is a 8-watt RF MOSFET Amplifier Module

for 9.6-volt portable radios that operate in the 135- to 175-MHz

range.

The battery can be connected directly to the drain of the

enhancement-mode MOSFET transistors. Without the gate

voltage (VGG=0V), only a small leakage current flows into the drain

and the RF input signal attenuates up to 60 dB. The output power

and drain current increase as the gate voltage increases. With a

gate voltage around 2.5V (minimum), output power and drain

current increases substantially. The nominal output power

becomes available at 3V (typical) and 3.5V (maximum). At

VGG=3.5V, the typical gate current is 1 mA.

This module is designed for non-linear FM modulation, but may

also be used for linear modulation by setting the drain quiescent

current with the gate voltage and controlling the output power with

the input power.

FEATURES

• Enhancement-Mode MOSFET Transistors

(IDD@0 @ VDD=9.6V, VGG=0V)

• Pout>8W @ VDD=9.6V, VGG=3.5V, Pin=20mW

• hT>50% @ Pout=8W (VGG control), VDD=9.6V, Pin=20mW

• Broadband Frequency Range: 135-175MHz

• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V

• Module Size: 30 x 10 x 5.4 mm

• Linear operation is possible by setting the quiescent drain current

with the gate voltage and controlling the output power with the

input power

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