MRF6S21100HR3

 

 

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for W-CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio, WLL and

TD-SCDMA applications.

 Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 950 mA,

Pout

 = 23 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz,

PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain ó 15.9 dB

Drain Efficiency ó 27.6%

IM3 @ 10 MHz Offset ó -37 dBc in 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset ó -39.5 dBc in 3.84 MHz Channel Bandwidth

 Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW

Output Power

Features

 Characterized with Series Equivalent Large-Signal Impedance Parameters

 Internally Matched for Ease of Use

 Qualified Up to a Maximum of 32 VDD Operation

 Integrated ESD Protection

 Designed for Lower Memory Effects and Wide Instantaneous Bandwidth 

Applications

 RoHS Compliant

 In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

 

 

 

 

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