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MRF6S21100H

MRF6S21100H
型号:MRF6S21100H
品牌:Freescale Freescale
批号:13+RoHs
封装:NI-780
原价:360
数量:68000
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备注:100% 全新原装 (New and original)
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 由于客户采购批量与样品的价格不同,网上无法统一注明,请您把采购型号通过邮件或客服QQ:2850151585 发给我们,也可以拨打明佳达国内销售部电话:0755-83957301,由客服人员为您报价;有时元件厂商价格稍许变动,本公司未能及时调整,如您觉得售价稍高,请与我们说明并适当议价;感谢支持.

 
 
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio, WLL and
TD-SCDMA applications.
 Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 950 mA,
Pout
 = 23 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain ó 15.9 dB
Drain Efficiency ó 27.6%
IM3 @ 10 MHz Offset ó -37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset ó -39.5 dBc in 3.84 MHz Channel Bandwidth
 Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW
Output Power
Features
 Characterized with Series Equivalent Large-Signal Impedance Parameters
 Internally Matched for Ease of Use
 Qualified Up to a Maximum of 32 VDD Operation
 Integrated ESD Protection
 Designed for Lower Memory Effects and Wide Instantaneous Bandwidth 
Applications
 RoHS Compliant
 In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
 
 
 
 
Because of wholesale price is different from sample price, our website cannot state. Please contact us online. As well as welcome you call us : 0755-83957301.We will offer a right price; Sometimes manufacturer's price is unstable, so we don't adjust price in time. if you feel price is a little high for you, just feel free to contact us for consultation. Thank you for your support !
 
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