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MRF6S21100H

型号：MRF6S21100H
品牌：Freescale

批号：13+RoHs
封装：NI-780
原价：360
数量：68000
PDF电子文档：

订购电话：86755-83294757
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备注：100% 全新原装 (New and original)

详细描述

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RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for W-CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio, WLL and

TD-SCDMA applications.

Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 950 mA,

Pout

= 23 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz,

PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain ó 15.9 dB

Drain Efficiency ó 27.6%

IM3 @ 10 MHz Offset ó -37 dBc in 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset ó -39.5 dBc in 3.84 MHz Channel Bandwidth

Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW

Output Power

Features

Characterized with Series Equivalent Large-Signal Impedance Parameters

Internally Matched for Ease of Use

Qualified Up to a Maximum of 32 VDD Operation

Integrated ESD Protection

Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

Applications

RoHS Compliant

In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Because of wholesale price is different from sample price, our website cannot state. Please contact us online. As well as welcome you call us : 0755-83957301.We will offer a right price; Sometimes manufacturer's price is unstable, so we don't adjust price in time. if you feel price is a little high for you, just feel free to contact us for consultation. Thank you for your support !

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