STD6N62K3

 

 

Features

 

100% avalanche tested

 Extremely high dv/dt capability

 Gate charge minimized

 Very low intrinsic capacitances

 Improved diode reverse recovery 

characteristics

 Zener-protected

 

 

Application

Switching applications

Description

The new SuperMESH3™ series is obtained 

through the combination of a further fine tuning of 

ST's well established strip-based PowerMESH™ 

layout with a new optimization of the vertical 

structure. In addition to reducing on-resistance 

significantly versus previous generation, special 

attention has been taken to ensure a very good 

dv/dt capability and higher margin in breakdown 

voltage for the most demanding application.

 

 

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