BLF8G19LS-170BV

BLF8G19LS BLF8G19LS BLF8G19LS-170BV  --  Power LDMOS transistor

Features and benefits

Excellent ruggedness

High efficiency

Low Rth providing excellent thermal stability

Decoupling leads to enable improved video bandwidth (100 MHz typical)

Lower output capacitance for improved performance in Doherty applications

Designed for low memory effects providing excellent pre-distortability

Internally matched for ease of use

Integrated ESD protection

Integrated current sense

Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

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