BLF245

VHF功率MOS晶体管

硅栅N沟道增强模式垂直D-MOS晶体管，主要用于VHF频率范围的大型信号放大器应用。此晶体管封装在带陶瓷帽的4引脚SOT123A法兰封装中。所有引脚均与法兰隔离。根据要求提供匹配的栅源电压 (VGS) 组。

特性和优势

高功率增益

低噪音系数

方便的功率控制

优良的热稳定性

能承受不匹配的满负载

应用

VHF频率范围内的大型信号放大器应用

FEATURES

• High power gain

• Low noise figure

• Easy power control

• Good thermal stability

• Withstands full load mismatch.

DESCRIPTION

Silicon N-channel enhancement

mode vertical D-MOS transistor

designed for large signal amplifier

applications in the VHF frequency

range.

The transistor is encapsulated in a

4-lead SOT123 flange envelope, with

a ceramic cap. All leads are isolated

from the flange.

Matched gate-source voltage (VGS)

groups are available on request.

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