PSMN5R0 PSMN5R0-30YL -- N-channel TrenchMOS logic level FET
Features and benefits
High efficiency due to low switching and conduction losses
Suitable for logic level gate drive sources
| FET 类型 |
MOSFET N 通道，金属氧化物 |
| FET 功能 |
逻辑电平门 |
| 漏源极电压 (Vdss) |
30V |
| 电流 - 连续漏极 (Id)（25°C 时） |
91A （Tc） |
| 不同 Id、Vgs 时的 Rds On（最大值） |
5 毫欧 @ 15A，10V |
| 不同 Id 时的 Vgs(th)（最大值） |
2.15V @ 1mA |
| 不同 Vgs 时的栅极电荷 (Qg) |
29nC @ 10V |
| 不同 Vds 时的输入电容 (Ciss) |
1760pF @ 12V |
| 功率 - 最大值 |
61W |
| 安装类型 |
表面贴装 |
| 封装/外壳 |
SC-100，SOT-669，4-LFPAK |
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