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RA30H1317M1

型号：RA30H1317M1
品牌：MIT

批号：13+
封装：RF Power Transistor
原价：160
数量：32568
PDF电子文档：

订购电话：86755-83294757
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备注：Origina in stock 原装现货

详细描述

RA30H1317M1

RF MOSFET MODULE 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO

DESCRIPTION

The RA30H1317M1 is a 30-watt RF MOSFET Amplifier

Module for 12.5-volt mobile radios that operate in the 135- to

175-MHz range.

The battery can be connected directly to the drain of the

enhancement-mode MOSFET transistors. The output power and

drain current increase as the gate voltage increases. With a gate

voltage around 3.5V (minimum), output power and drain current

increases substantially. The nominal output power becomes

available at 4V (typical) and 5V (maximum). At VGG=5V, the

typical gate current is 1 mA.

This module is designed for non-linear FM modulation, but may

also be used for linear modulation by setting the drain quiescent

current with the gate voltage and controlling the output power

with the input power.

FEATURES

• Enhancement-Mode MOSFET Transistors

(IDD≅0 @ VDD=12.5V, VGG=0V)

• Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW

• Broadband Frequency Range: 135-175MHz

• Low-Power Control Current IGG=1mA (typ) at VGG=5V

• Module Size: 66 x 21 x 9.88 mm

• Linear operation is possible by setting the quiescent drain

current with the gate voltage and controlling the output power

with the input power

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