NDS355AN - N-Channel Logic Level Enhancement Mode Field Effect Transistor - Fairchild Semiconductor
Features
Absolute Maximum Ratings TA
= 25°C unless otherwise noted
Symbol Parameter NDS355AN Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage - Continuous ±20 V
ID Maximum Drain Current - Continuous (Note 1a) 1.7 A
- Pulsed 10
PD Maximum Power Dissipation (Note 1a) 0.5 W
(Note 1b) 0.46
TJ
,TSTG Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICS
RqJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W
RqJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W
NDS355AN Rev.C
1.7A, 30 V, RDS(ON)
= 0.125 W @ VGS = 4.5 V
RDS(ON)
= 0.085 W @ VGS = 10 V.
Industry standard outline SOT-23 surface mount package
using proprietary SuperSOTTM-3 design for superior
thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current
capability.
Compact industry standard SOT-23 surface mount
package.
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