NDS8434 NDS8434A -- Single P-Channel Enhancement Mode Field Effect Transistor
Feature
-7.8 A, -20 V. RDS(ON) = 0.024 W @ VGS = -4.5 V
RDS(ON) = 0.032 W @ VGS = -2.5V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used surface mount package.
| FET 类型 |
MOSFET P 通道，金属氧化物 |
| FET 功能 |
逻辑电平门 |
| 漏源极电压 (Vdss) |
20V |
| 电流 - 连续漏极 (Id)（25°C 时） |
7.8A （Ta） |
| 不同 Id、Vgs 时的 Rds On（最大值） |
24 毫欧 @ 7.9A，4.5V |
| 不同 Id 时的 Vgs(th)（最大值） |
1V @ 250µA |
| 不同 Vgs 时的栅极电荷 (Qg) |
55nC @ 4.5V |
| 不同 Vds 时的输入电容 (Ciss) |
1730pF @ 10V |
| 功率 - 最大值 |
1W |
| 安装类型 |
表面贴装 |
| 封装/外壳 |
8-SOIC（0.154"，3.90mm 宽） |
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